TY - JOUR
T1 - From diffusion limited to incorporation limited growth of nanowires
AU - Johansson, Jonas
AU - Magnusson, Martin H.
PY - 2019
Y1 - 2019
N2 - We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.
AB - We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.
KW - A1. Nanostructures
KW - A3. Vapor phase epitaxy
KW - B1. Nanomaterials
KW - B2. Semiconducting III-V materials
U2 - 10.1016/j.jcrysgro.2019.125192
DO - 10.1016/j.jcrysgro.2019.125192
M3 - Article
AN - SCOPUS:85070987670
SN - 0022-0248
VL - 525
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125192
ER -