Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material

Jie Sun, Marcus Larsson, Ivan Maximov, Hongqi Xu

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

Sammanfattning

Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
Originalspråkengelska
Titel på värdpublikation2009 IEEE Nanotechnology Materials and Devices Conference
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor183-185
StatusPublished - 2009
EvenemangIEEE Nanotechnology Materials and Devices Conference - Traverse City, MI, USA
Varaktighet: 2009 juni 22009 juni 5

Konferens

KonferensIEEE Nanotechnology Materials and Devices Conference
Land/TerritoriumUSA
OrtTraverse City, MI
Period2009/06/022009/06/05

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

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