Sammanfattning
Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
Originalspråk | engelska |
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Titel på värdpublikation | 2009 IEEE Nanotechnology Materials and Devices Conference |
Förlag | IEEE - Institute of Electrical and Electronics Engineers Inc. |
Sidor | 183-185 |
Status | Published - 2009 |
Evenemang | IEEE Nanotechnology Materials and Devices Conference - Traverse City, MI, USA Varaktighet: 2009 juni 2 → 2009 juni 5 |
Konferens
Konferens | IEEE Nanotechnology Materials and Devices Conference |
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Land/Territorium | USA |
Ort | Traverse City, MI |
Period | 2009/06/02 → 2009/06/05 |
Ämnesklassifikation (UKÄ)
- Den kondenserade materiens fysik