Heterostructures in one-dimensional nanowires

Mikael Björk; Jonas Ohlsson; Ann Persson; Reine Wallenberg; Lars Samuelson

Heterostructures in one-dimensional nanowires

Mikael Björk, Jonas Ohlsson, Ann Persson, Reine Wallenberg, Lars Samuelson

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

Sammanfattning

Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements

Originalspråk	engelska
Titel på värdpublikation	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Förlag	Lund University
Antal sidor	2
Status	Published - 2002
Evenemang	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sverige Varaktighet: 2002 juni 24 → 2002 juni 28

Konferens

Konferens	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Land/Territorium	Sverige
Ort	Malmö
Period	2002/06/24 → 2002/06/28

Ämnesklassifikation (UKÄ)

Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)

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@inproceedings{1f017665d0954c0fb09d0ac126abb779,

title = "Heterostructures in one-dimensional nanowires",

abstract = "Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements",

keywords = "monolayers, InAs-Au, nanowire based device elements, electrical measurements, transmission electron microscopy, atomically sharp interfaces, heterostructure interfaces, chemically uniform InAs wires, size selected Au aerosol particles, chemical beam epitaxy, III/V nanowires growth, one dimensional nanowires heterostructures, barriers",

author = "Mikael Bj{\"o}rk and Jonas Ohlsson and Ann Persson and Reine Wallenberg and Lars Samuelson",

year = "2002",

language = "English",

booktitle = "7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science",

publisher = "Lund University",

note = "Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) ; Conference date: 24-06-2002 Through 28-06-2002",

}

Björk, M, Ohlsson, J, Persson, A, Wallenberg, R & Samuelson, L 2002, Heterostructures in one-dimensional nanowires. i 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sverige, 2002/06/24.

TY - GEN

T1 - Heterostructures in one-dimensional nanowires

AU - Björk, Mikael

AU - Ohlsson, Jonas

AU - Persson, Ann

AU - Wallenberg, Reine

AU - Samuelson, Lars

PY - 2002

Y1 - 2002

N2 - Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements

AB - Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements

KW - monolayers

KW - InAs-Au

KW - nanowire based device elements

KW - electrical measurements

KW - transmission electron microscopy

KW - atomically sharp interfaces

KW - heterostructure interfaces

KW - chemically uniform InAs wires

KW - size selected Au aerosol particles

KW - chemical beam epitaxy

KW - III/V nanowires growth

KW - one dimensional nanowires heterostructures

KW - barriers

M3 - Paper in conference proceeding

BT - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund University

T2 - Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Y2 - 24 June 2002 through 28 June 2002

ER -

Heterostructures in one-dimensional nanowires

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Ämnesklassifikation (UKÄ)

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