High resolution 100kV electron beam lithography in SU-8

B. Bilenberg; S. Jacobsen; M.s. Schmidt; L.h.d. Skjolding; P. Shi; P. Bøggild; J.O. Tegenfeldt; A. Kristensen

doi:10.1016/j.mee.2006.01.142

High resolution 100kV electron beam lithography in SU-8

B. Bilenberg, S. Jacobsen, M.s. Schmidt, L.h.d. Skjolding, P. Shi, P. Bøggild, J.O. Tegenfeldt, A. Kristensen

Fasta tillståndets fysik

Technical University of Denmark

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Sammanfattning

High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.

Originalspråk	engelska
Sidor (från-till)	1609-1612
Tidskrift	Microelectronic Engineering
Volym	83
Nummer	4-9
DOI	https://doi.org/10.1016/j.mee.2006.01.142
Status	Published - 2006
Evenemang	Micro- and Nano-Engineering MNE 2005 - Vienna, Österrike Varaktighet: 2005 sep. 19 → 2005 sep. 22

Ämnesklassifikation (UKÄ)

Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)

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10.1016/j.mee.2006.01.142

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@article{81df96b7a735422bbbd66727e74c4017,

title = "High resolution 100kV electron beam lithography in SU-8",

abstract = "High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.",

keywords = "SU-8, 100 kV electron beam lithography, reactive ion etch, DNA stretching, nanochannels",

author = "B. Bilenberg and S. Jacobsen and M.s. Schmidt and L.h.d. Skjolding and P. Shi and P. B{\o}ggild and J.O. Tegenfeldt and A. Kristensen",

year = "2006",

doi = "10.1016/j.mee.2006.01.142",

language = "English",

volume = "83",

pages = "1609--1612",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "4-9",

note = "Micro- and Nano-Engineering MNE 2005 ; Conference date: 19-09-2005 Through 22-09-2005",

}

TY - JOUR

T1 - High resolution 100kV electron beam lithography in SU-8

AU - Bilenberg, B.

AU - Jacobsen, S.

AU - Schmidt, M.s.

AU - Skjolding, L.h.d.

AU - Shi, P.

AU - Bøggild, P.

AU - Tegenfeldt, J.O.

AU - Kristensen, A.

PY - 2006

Y1 - 2006

N2 - High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.

AB - High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.

KW - SU-8

KW - 100 kV electron beam lithography

KW - reactive ion etch

KW - DNA stretching

KW - nanochannels

U2 - 10.1016/j.mee.2006.01.142

DO - 10.1016/j.mee.2006.01.142

M3 - Article

SN - 0167-9317

VL - 83

SP - 1609

EP - 1612

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-9

T2 - Micro- and Nano-Engineering MNE 2005

Y2 - 19 September 2005 through 22 September 2005

ER -

High resolution 100kV electron beam lithography in SU-8

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Ämnesklassifikation (UKÄ)

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