High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

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Sammanfattning

In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
Originalspråkengelska
Titel på värdpublikation2011 IEEE International Electron Devices Meeting (IEDM)
FörlagIEEE Press
ISBN (tryckt)978-1-4577-0505-2
StatusPublished - 2011
EvenemangIEEE International Electron Devices Meeting (IEDM) - Washington, DC
Varaktighet: 2011 dec. 52011 dec. 7

Konferens

KonferensIEEE International Electron Devices Meeting (IEDM)
Period2011/12/052011/12/07

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik
  • Elektroteknik och elektronik

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