III-V MOSFETs for High-Frequency and Digital Applications

Cezar Zota

III-V MOSFETs for High-Frequency and Digital Applications

Cezar Zota

Forskningsoutput: Avhandling › Doktorsavhandling (sammanläggning)

2040 Nedladdningar (Pure)

Sammanfattning

III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.

Originalspråk	engelska
Kvalifikation	Doktor
Tilldelande institution	Institutionen för elektro- och informationsteknik
Handledare	Lind, Erik, handledare Wernersson, Lars-Erik, handledare Lind, Erik, handledare Borg, Mattias, handledare
Tilldelningsdatum	2017 maj 12
Förlag	Department of Electrical and Information Technology, Lund University
ISBN (tryckt)	978-91-7753-144-9
ISBN (elektroniskt)	978-91-7753-145-6
Status	Published - 2017 apr. 10

Bibliografisk information

Defence details
Date: 2017-05-12
Time: 10:15
Place: lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund
External reviewer
Name: Rodwell, Mark
Title: Professor
Affiliation: University of California, Santa Barbara, USA
---

Ämnesklassifikation (UKÄ)

Teknik

Tillgång till dokument

CBZ_THESIS_20170410Publicerad version, 16,9 MB

9 Artikel i vetenskaplig tidskrift
3 Konferenspaper i proceeding

A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Netsu, S., Hellenbrand, M., Zota, C. B., Miyamoto, Y. & Lind, E., 2018, I: IEEE Journal of the Electron Devices Society. 6, s. 408-412
Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Öppen tillgång
1/f and RTS noise in InGaAs nanowire MOSFETs
Möhle, C., Zota, C. B., Hellenbrand, M. & Lind, E., 2017 juni 25, I: Microelectronic Engineering. 178, s. 52-55
Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Fil
212 Nedladdningar (Pure)
InGaAs tri-gate MOSFETs with record on-current
Zota, C. B., Lindelow, F., Wernersson, L. E. & Lind, E., 2017 jan. 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. IEEE - Institute of Electrical and Electronics Engineers Inc., s. 3.2.1-3.2.4 7838336
Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

Öppen tillgång
Fil
286 Nedladdningar (Pure)

1 Handledning av forskarstuderande

Cezar Zota
Lind, E. (Första/primär/huvudhandledare), Borg, M. (Delad andra handledare) & Wernersson, L.-E. (Delad andra handledare)
2017 apr.
Aktivitet: Examination och handledarskap › Handledning av forskarstuderande

Citera det här

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title = "III-V MOSFETs for High-Frequency and Digital Applications",

abstract = "III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.",

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T1 - III-V MOSFETs for High-Frequency and Digital Applications

AU - Zota, Cezar

N1 - Defence details Date: 2017-05-12 Time: 10:15 Place: lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund External reviewer Name: Rodwell, Mark Title: Professor Affiliation: University of California, Santa Barbara, USA ---

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N2 - III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.

AB - III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.

KW - III-V

KW - MOSFET

KW - Transistor

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SN - 978-91-7753-144-9

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ER -

III-V MOSFETs for High-Frequency and Digital Applications

Sammanfattning

Bibliografisk information

Ämnesklassifikation (UKÄ)

Tillgång till dokument

Fingeravtryck

Forskningsoutput

A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

1/f and RTS noise in InGaAs nanowire MOSFETs

InGaAs tri-gate MOSFETs with record on-current

Aktiviteter

Cezar Zota

Citera det här