@inproceedings{625838f885984dedacb6af69cddaa61a,
title = "III-V Nanowire MOSFETs in RF-Applications",
abstract = "InAs nanowires have been used to fabricate high-performance MOSFETs that have been integrated into small-scale RF-circuits. We describe the strategy for the design of the transistor architecture and present data for the DC and high-frequency performance. Studies of the 1/f-noise show competitive normalized noise spectral density although it suggests the presence of defects within the high-k film that affect the number of carriers in the transistor channel. These transistors have been used in single-balanced down-conversion mixers operating up to a few GHz.",
author = "Lars-Erik Wernersson",
year = "2014",
doi = "10.1149/06417.0069ecst",
language = "English",
volume = "64",
publisher = "Electrochemical Society",
number = "17",
pages = "69--73",
booktitle = "ECS Transactions",
address = "United States",
note = "Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society ; Conference date: 05-10-2014 Through 09-10-2014",
}