In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

We report on In0.53Ga0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at V-DS = 0.05 V and L-G = 200 nm. At V-DS = 0.5 V, (gm), (max) = 1.67 mS/mu m is achieved (L-G = 32 nm). The extrapolated cutoff frequency f(T) of 210 GHz and the maximum oscillation frequency f(max) of 250 GHz are the highest of any reported III-V multiple-gate MOSFET.