InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition

Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars Erik Wernersson, Anders Mikkelsen, Rainer Timm

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

5 Citeringar (SciVal)

Sammanfattning

Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the InAs(100) substrate by removing the native oxide via annealing in ultra-high vacuum (UHV) under a flux of atomic hydrogen and growing a stoichiometry controlled oxide (thermal oxide) in UHV, prior to atomic layer deposition (ALD) of an Al2O3 high-k layer. The semiconductor-oxide interfacial stoichiometry and surface morphology are investigated by synchrotron based X-ray photoemission spectroscopy, scanning tunneling microscopy, and low energy electron diffraction. After thermal oxide growth, we find a thin non-crystalline layer with a flat surface structure. Importantly, the InAs-oxide interface shows a significantly decreased amount of In3+, As5+, and As0 components, which can be correlated to electrically detrimental defects. Capacitance-voltage measurements confirm a decrease of the interface trap density in gate stacks including the thermal oxide as compared to reference samples. This makes the concept of a thermal oxide layer prior to ALD promising for improving device performance if this thermal oxide layer can be stabilized upon exposure to ambient air.

Originalspråkengelska
Artikelnummer125227
TidskriftAIP Advances
Volym8
Utgåva12
DOI
StatusPublished - 2018 dec. 1

Ämnesklassifikation (UKÄ)

  • Materialteknik
  • Den kondenserade materiens fysik

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