InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

M. S. Park, Vishal Jain, E. H. Lee, S. H. Kim, Håkan Pettersson, Q. Wang, J. D. Song, W. J. Choi

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
Originalspråkengelska
Sidor (från-till)1731-1732
TidskriftElectronics Letters
Volym50
Nummer23
DOI
StatusPublished - 2014

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

Fingeravtryck

Utforska forskningsämnen för ”InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här