InAsP/InAs nanowire heterostructure field effect transistors

Erik Lind; Lars-Erik Wernersson

doi:10.1109/DRC.2006.305171

InAsP/InAs nanowire heterostructure field effect transistors

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

Sammanfattning

We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

Originalspråk	engelska
Titel på värdpublikation	Device Research Conference
Förlag	IEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor	173-174
ISBN (tryckt)	0-7803-9748-7
DOI	https://doi.org/10.1109/DRC.2006.305171
Status	Published - 2006
Evenemang	Device Research Conference, 2006 - University Park, PA, USA Varaktighet: 2006 juni 26 → 2006 juni 28

Konferens

Konferens	Device Research Conference, 2006
Land/Territorium	USA
Ort	University Park, PA
Period	2006/06/26 → 2006/06/28

Ämnesklassifikation (UKÄ)

Den kondenserade materiens fysik
Elektroteknik och elektronik

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10.1109/DRC.2006.305171

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title = "InAsP/InAs nanowire heterostructure field effect transistors",

abstract = "We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage",

keywords = "nanowire heterostructure field effect transistors, InAsP-InAs",

author = "Erik Lind and Lars-Erik Wernersson",

year = "2006",

doi = "10.1109/DRC.2006.305171",

language = "English",

isbn = "0-7803-9748-7",

pages = "173--174",

booktitle = "Device Research Conference",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Device Research Conference, 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

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AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2006

Y1 - 2006

N2 - We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

AB - We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

KW - nanowire heterostructure field effect transistors

KW - InAsP-InAs

U2 - 10.1109/DRC.2006.305171

DO - 10.1109/DRC.2006.305171

M3 - Paper in conference proceeding

SN - 0-7803-9748-7

SP - 173

EP - 174

BT - Device Research Conference

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - Device Research Conference, 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

InAsP/InAs nanowire heterostructure field effect transistors

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