Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Rainer Timm; Martin Hjort; Alexander Fian; Claes Thelander; Erik Lind; Jesper N Andersen; Lars-Erik Wernersson; Anders Mikkelsen

doi:10.1016/j.mee.2011.03.087

Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Rainer Timm, Martin Hjort, Alexander Fian, Claes Thelander, Erik Lind, Jesper N Andersen, Lars-Erik Wernersson, Anders Mikkelsen

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

Sammanfattning

We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction
of the surface.

Originalspråk	engelska
Titel på värdpublikation	Microelectronic Engineering
Sidor	1091-1094
Antal sidor	4
Volym	88
DOI	https://doi.org/10.1016/j.mee.2011.03.087
Status	Published - 2011
Evenemang	17th Conference on "Insulating Films on Semiconductors" - Grenoble, Frankrike Varaktighet: 2011 juni 21 → 2011 juni 24

Publikationsserier

Namn
Volym	88

Konferens

Konferens	17th Conference on "Insulating Films on Semiconductors"
Land/Territorium	Frankrike
Ort	Grenoble
Period	2011/06/21 → 2011/06/24

Ämnesklassifikation (UKÄ)

Atom- och molekylfysik och optik

Tillgång till dokument

10.1016/j.mee.2011.03.087

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@inproceedings{6f168e8374b04ea682bcdb526f809d1d,

title = "Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy",

abstract = "We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction of the surface.",

author = "Rainer Timm and Martin Hjort and Alexander Fian and Claes Thelander and Erik Lind and Andersen, {Jesper N} and Lars-Erik Wernersson and Anders Mikkelsen",

year = "2011",

doi = "10.1016/j.mee.2011.03.087",

language = "English",

volume = "88",

pages = "1091--1094",

booktitle = "Microelectronic Engineering",

note = "17th Conference on {"}Insulating Films on Semiconductors{"} ; Conference date: 21-06-2011 Through 24-06-2011",

}

Timm, R , Hjort, M, Fian, A, Thelander, C , Lind, E , Andersen, JN , Wernersson, L-E & Mikkelsen, A 2011, Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy. i Microelectronic Engineering. vol. 88, s. 1091-1094, 17th Conference on "Insulating Films on Semiconductors", Grenoble, Frankrike, 2011/06/21. https://doi.org/10.1016/j.mee.2011.03.087

TY - GEN

T1 - Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

AU - Timm, Rainer

AU - Hjort, Martin

AU - Fian, Alexander

AU - Thelander, Claes

AU - Lind, Erik

AU - Andersen, Jesper N

AU - Wernersson, Lars-Erik

AU - Mikkelsen, Anders

PY - 2011

Y1 - 2011

N2 - We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction of the surface.

AB - We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction of the surface.

U2 - 10.1016/j.mee.2011.03.087

DO - 10.1016/j.mee.2011.03.087

M3 - Paper in conference proceeding

VL - 88

SP - 1091

EP - 1094

BT - Microelectronic Engineering

T2 - 17th Conference on "Insulating Films on Semiconductors"

Y2 - 21 June 2011 through 24 June 2011

ER -

Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Sammanfattning

Publikationsserier

Konferens

Ämnesklassifikation (UKÄ)

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