Intrinsic Performance of InAs Nanowire Capacitors

Kristofer Jansson, Erik Lind, Lars-Erik Wernersson

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Originalspråkengelska
Sidor (från-till)452-459
TidskriftIEEE Transactions on Electron Devices
Volym61
Nummer2
DOI
StatusPublished - 2014

Ämnesklassifikation (UKÄ)

  • Nanoteknik
  • Elektroteknik och elektronik

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