Sammanfattning
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Originalspråk | engelska |
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Sidor (från-till) | 452-459 |
Tidskrift | IEEE Transactions on Electron Devices |
Volym | 61 |
Nummer | 2 |
DOI | |
Status | Published - 2014 |
Ämnesklassifikation (UKÄ)
- Nanoteknik
- Elektroteknik och elektronik