@inproceedings{7738bcdf8fa14928a064edd73d860233,
title = "Investigation of polymethylmethacrylate resist residues using photoelectron microscopy",
abstract = "Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.",
author = "Ivan Maximov and AA Zakharov and Tommy Holmqvist and Lars Montelius and Ingolf Lindau",
year = "2002",
doi = "10.1116/1.1470509",
language = "English",
volume = "20",
publisher = "American Institute of Physics (AIP)",
number = "3",
pages = "1139--1142",
booktitle = "Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures",
address = "United States",
note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",
}