Junctionless tri-gate InGaAs MOSFETs

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Sammanfattning

We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 - 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 - 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mSm and I ON = 160A/m (at I OFF = 100 nA/m and V DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer.

Originalspråkengelska
Artikelnummer120306
TidskriftJapanese Journal of Applied Physics
Volym56
Nummer12
DOI
StatusPublished - 2017 dec. 1

Ämnesklassifikation (UKÄ)

  • Annan elektroteknik och elektronik

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