@article{3e81fbfe4a26498b96ae33a9ce0c94ab,
title = "Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga2O3",
abstract = "We report the strain and stress relationships for the three lowest energy direct band to band transitions at the Brillouin zone center in monoclinic β-Ga2O3. These relationships augment four linear perturbation parameters for situations, which maintain the monoclinic symmetry, which are reported here as numerical values obtained from density functional theory calculations. With knowledge of these perturbation parameters, the shift of each of the three lowest band to band transition energies can be predicted from the knowledge of the specific state of strain or stress, thus providing a useful tool for modeling performance of power electronic devices and rational strain engineering in heteroepitaxy.",
author = "R. Korlacki and J. Knudtson and M. Stokey and M. Hilfiker and V. Darakchieva and M. Schubert",
note = "Funding Information: This work was supported in part by the National Science Foundation (NSF) under Award Nos. NSF DMR 1808715 and NSF/ EPSCoR RII Track-1, Emergent Quantum Materials and Technologies (EQUATE) under Award No. OIA-2044049, and by the Air Force Office of Scientific Research under Award Nos. FA9550-18-1-0360, FA9550-19-S-0003, and FA9550-21-1-0259. This work was also supported by the Knut and Alice Wallenbergs Foundation award “Wide-bandgap semiconductors for next generation quantum components.” M.S. acknowledges the University of Nebraska Foundation and the J. A. Woollam Foundation for support. This work was also supported in part by the Swedish Research Council under VR Award No. 2016-00889, the Swedish Foundation for Strategic Research under Grant Nos. RIF14-055 and EM16-0024, by the Swedish Governmental Agency for Innovation Systems VINNOVA under the Competence Center Program Grant No. 2016-05190, and by the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University under Faculty Grant SFO Mat LiU No. 2009-00971. DFT calculations were in part performed at the Holland Computing Center of the University of Nebraska, which receives support from the Nebraska Research Initiative. Funding Information: This work was supported in part by the National Science Foundation (NSF) under Award Nos. NSF DMR 1808715 and NSF/EPSCoR RII Track-1, Emergent Quantum Materials and Technologies (EQUATE) under Award No. OIA-2044049, and by the Air Force Office of Scientific Research under Award Nos. FA9550-18-1-0360, FA9550-19-S-0003, and FA9550-21-1-0259. This work was also supported by the Knut and Alice Wallenbergs Foundation award ?Wide-bandgap semiconductors for next generation quantum components.? M.S. acknowledges the University of Nebraska Foundation and the J. A. Woollam Foundation for support. This work was also supported in part by the Swedish Research Council under VR Award No. 2016-00889, the Swedish Foundation for Strategic Research under Grant Nos. RIF14-055 and EM16-0024, by the Swedish Governmental Agency for Innovation Systems VINNOVA under the Competence Center Program Grant No. 2016-05190, and by the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Link?ping University under Faculty Grant SFO Mat LiU No. 2009-00971. DFT calculations were in part performed at the Holland Computing Center of the University of Nebraska, which receives support from the Nebraska Research Initiative. Publisher Copyright: {\textcopyright} 2022 Author(s).",
year = "2022",
month = jan,
day = "24",
doi = "10.1063/5.0078157",
language = "English",
volume = "120",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "4",
}