Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

239 Nedladdningar (Pure)

Sammanfattning

A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.

Originalspråkengelska
Titel på värdpublikation2019 92nd ARFTG Microwave Measurement Conference
Undertitel på värdpublikationNext Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (elektroniskt)9781538665992
DOI
StatusPublished - 2019 feb. 7
Evenemang92nd ARFTG Microwave Measurement Conference, ARFTG 2019 - Orlando, USA
Varaktighet: 2019 jan. 212019 jan. 22

Konferens

Konferens92nd ARFTG Microwave Measurement Conference, ARFTG 2019
Land/TerritoriumUSA
OrtOrlando
Period2019/01/212019/01/22

Bibliografisk information

Awarded ARFTG scholarship as selected student-applicant

Ämnesklassifikation (UKÄ)

  • Elektroteknik och elektronik

Fingeravtryck

Utforska forskningsämnen för ”Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här