Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

Stefan Andric; Lars Ohlsson; Lars Erik Wenrersson

doi:10.1109/ARFTG.2019.8637222

Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

Stefan Andric, Lars Ohlsson, Lars Erik Wenrersson

Nanoelektronik

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

238 Nedladdningar (Pure)

Sammanfattning

A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.

Originalspråk	engelska
Titel på värdpublikation	2019 92nd ARFTG Microwave Measurement Conference
Undertitel på värdpublikation	Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019
Förlag	IEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (elektroniskt)	9781538665992
DOI	https://doi.org/10.1109/ARFTG.2019.8637222
Status	Published - 2019 feb. 7
Evenemang	92nd ARFTG Microwave Measurement Conference, ARFTG 2019 - Orlando, USA Varaktighet: 2019 jan. 21 → 2019 jan. 22

Konferens

Konferens	92nd ARFTG Microwave Measurement Conference, ARFTG 2019
Land/Territorium	USA
Ort	Orlando
Period	2019/01/21 → 2019/01/22

Bibliografisk information

Awarded ARFTG scholarship as selected student-applicant

Ämnesklassifikation (UKÄ)

Elektroteknik och elektronik

Tillgång till dokument

10.1109/ARFTG.2019.8637222

92ARFTG_Stefan_Andric

1 Doktorsavhandling (sammanläggning)

III-V Nanowire MOSFET High-Frequency Technology Platform
Andric, S., 2021 maj 4, Department of Electrical and Information Technology, Lund University. 126 s.
Forskningsoutput: Avhandling › Doktorsavhandling (sammanläggning)

Öppen tillgång
Fil

Lund Nano Lab - part of national infrastructure Myfab
Hankin, L. (Manager)
NanoLund: Centre for Nanoscience
Infrastruktur

Citera det här

Andric, S., Ohlsson, L., & Wenrersson, L. E. (2019). Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon. I 2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019 Artikel 8637222 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ARFTG.2019.8637222

Andric, Stefan ; Ohlsson, Lars ; Wenrersson, Lars Erik. / Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon. 2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019. IEEE - Institute of Electrical and Electronics Engineers Inc., 2019.

@inproceedings{1028e4e184b14bb1874b90122235d8e8,

title = "Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon",

abstract = "A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.",

keywords = "Back-End-Of-Line (BEOL), Benzocyclobutene (BCB), Microstrip Transmission Line, Nanowire MOSFET, On-wafer Calibration, Thru-Reflect-Line (TRL)",

author = "Stefan Andric and Lars Ohlsson and Wenrersson, {Lars Erik}",

note = "Awarded ARFTG scholarship as selected student-applicant; 92nd ARFTG Microwave Measurement Conference, ARFTG 2019 ; Conference date: 21-01-2019 Through 22-01-2019",

year = "2019",

month = feb,

day = "7",

doi = "10.1109/ARFTG.2019.8637222",

language = "English",

booktitle = "2019 92nd ARFTG Microwave Measurement Conference",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Andric, S, Ohlsson, L & Wenrersson, LE 2019, Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon. i 2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019., 8637222, IEEE - Institute of Electrical and Electronics Engineers Inc., 92nd ARFTG Microwave Measurement Conference, ARFTG 2019, Orlando, USA, 2019/01/21. https://doi.org/10.1109/ARFTG.2019.8637222

Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon. / Andric, Stefan; Ohlsson, Lars ; Wenrersson, Lars Erik.
2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019. IEEE - Institute of Electrical and Electronics Engineers Inc., 2019. 8637222.

Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding › Peer review

TY - GEN

T1 - Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

AU - Andric, Stefan

AU - Ohlsson, Lars

AU - Wenrersson, Lars Erik

N1 - Awarded ARFTG scholarship as selected student-applicant

PY - 2019/2/7

Y1 - 2019/2/7

N2 - A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.

AB - A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.

KW - Back-End-Of-Line (BEOL)

KW - Benzocyclobutene (BCB)

KW - Microstrip Transmission Line

KW - Nanowire MOSFET

KW - On-wafer Calibration

KW - Thru-Reflect-Line (TRL)

U2 - 10.1109/ARFTG.2019.8637222

DO - 10.1109/ARFTG.2019.8637222

M3 - Paper in conference proceeding

AN - SCOPUS:85063106716

BT - 2019 92nd ARFTG Microwave Measurement Conference

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 92nd ARFTG Microwave Measurement Conference, ARFTG 2019

Y2 - 21 January 2019 through 22 January 2019

ER -

Andric S, Ohlsson L , Wenrersson LE. Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon. I 2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019. IEEE - Institute of Electrical and Electronics Engineers Inc. 2019. 8637222 doi: 10.1109/ARFTG.2019.8637222

Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

Sammanfattning

Konferens

Bibliografisk information

Ämnesklassifikation (UKÄ)

Tillgång till dokument

Fingeravtryck

Forskningsoutput

III-V Nanowire MOSFET High-Frequency Technology Platform

Utrustning

Lund Nano Lab - part of national infrastructure Myfab

Citera det här