Sammanfattning
A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.
Originalspråk | engelska |
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Artikelnummer | 012058 |
Tidskrift | Journal of Physics: Conference Series |
Volym | 1410 |
Nummer | 1 |
DOI | |
Status | Published - 2019 |
Evenemang | 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Ryssland Varaktighet: 2019 apr. 22 → 2019 apr. 25 |
Ämnesklassifikation (UKÄ)
- Den kondenserade materiens fysik