New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Ivan Maximov, Marc Beck, Patrick Carlberg, Lars Montelius, K. Pfeiffer, F. Reuther, G. Gruetzer, H. Schulz, M. Wissen, H.-C. Scheer

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

Sammanfattning

We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm<sup>2</sup>. Studies of the resist properties as a function of chemical composition and development conditions are also presented
Originalspråkengelska
Titel på gästpublikation7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
FörlagLund University
Antal sidor2
StatusPublished - 2002
EvenemangProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sverige
Varaktighet: 2002 jun 242002 jun 28

Konferens

KonferensProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Land/TerritoriumSverige
OrtMalmö
Period2002/06/242002/06/28

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

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