Operando Surface Characterization of InP Nanowire p-n Junctions

Sarah R. McKibbin, Jovana Colvin, Andrea Troian, Johan V. Knutsson, James L. Webb, Gaute Otnes, Kai Dirscherl, Hikmet Sezen, Matteo Amati, Luca Gregoratti, Magnus T. Borgström, Anders Mikkelsen, Rainer Timm

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

8 Citeringar (SciVal)

Sammanfattning

We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- A nd p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations.

Originalspråkengelska
Sidor (från-till)887-895
Antal sidor9
TidskriftNano Letters
Volym20
Utgåva2
Tidigt onlinedatum2019 dec. 31
DOI
StatusPublished - 2020

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

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