Sammanfattning
We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.
Originalspråk | engelska |
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Sidor (från-till) | 231911-3 pp |
Tidskrift | Applied Physics Letters |
Volym | 92 |
Nummer | 23 |
DOI | |
Status | Published - 2008 |
Ämnesklassifikation (UKÄ)
- Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)