Optical properties and morphology of InAs/InP (113)B surface quantum dots

A Nakkar, H Folliot, A Le Corre, F Dore, I Alghoraibi, C Labbe, G Elias, S Loualiche, Mats-Erik Pistol, Philippe Caroff, Carl Ellström

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.
Originalspråkengelska
Sidor (från-till)231911-3 pp
TidskriftApplied Physics Letters
Volym92
Nummer23
DOI
StatusPublished - 2008

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)

Fingeravtryck

Utforska forskningsämnen för ”Optical properties and morphology of InAs/InP (113)B surface quantum dots”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här