Optimization of Near-Surface Quantum Well Processing

Patrik Olausson; Lasse Södergren; Mattias Borg; Erik Lind

doi:10.1002/pssa.202000720

Optimization of Near-Surface Quantum Well Processing

Patrik Olausson, Lasse Södergren, Mattias Borg, Erik Lind

NanoLund: Centre for Nanoscience

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Sammanfattning

Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown In_xGa_1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral In_xGa_1−xAs nanowires grown by selective area growth.

Originalspråk	engelska
Artikelnummer	2000720
Tidskrift	Physica Status Solidi (A) Applications and Materials Science
Volym	218
Nummer	7
Tidigt onlinedatum	2021 jan. 12
DOI	https://doi.org/10.1002/pssa.202000720
Status	Published - 2021

Ämnesklassifikation (UKÄ)

Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik)
Nanoteknik

Tillgång till dokument

10.1002/pssa.202000720

1 Doktorsavhandling (sammanläggning)

III-V Devices for Emerging Electronic Applications
Bidragets översatta titel : III-V komponenter för nya elektroniska applikationerOlausson, P., 2024 jan. 25, Lund: Department of Electrical and Information Technology, Lund University. 180 s.
Forskningsoutput: Avhandling › Doktorsavhandling (sammanläggning)

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III-V komponenter för nya elektroniska applikationer
Olausson, P. (Forskarstuderande), Lind, E. (Handledare) & Borg, M. (Biträdande handledare)
2019/07/01 → 2024/02/23
Projekt: Avhandling

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@article{2094f67b1fee44efaaffd5aa2392575a,

title = "Optimization of Near-Surface Quantum Well Processing",

abstract = "Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.",

keywords = "InGaAs, metalorganic vapor-phase epitaxy, metal–oxide–semiconductor field-effect transistors, mobility, quantum wells",

author = "Patrik Olausson and Lasse S{\"o}dergren and Mattias Borg and Erik Lind",

year = "2021",

doi = "10.1002/pssa.202000720",

language = "English",

volume = "218",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Optimization of Near-Surface Quantum Well Processing

AU - Olausson, Patrik

AU - Södergren, Lasse

AU - Borg, Mattias

AU - Lind, Erik

PY - 2021

Y1 - 2021

N2 - Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

AB - Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

KW - InGaAs

KW - metalorganic vapor-phase epitaxy

KW - metal–oxide–semiconductor field-effect transistors

KW - mobility

KW - quantum wells

U2 - 10.1002/pssa.202000720

DO - 10.1002/pssa.202000720

M3 - Article

AN - SCOPUS:85100035897

SN - 1862-6300

VL - 218

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

M1 - 2000720

ER -

Optimization of Near-Surface Quantum Well Processing

Sammanfattning

Ämnesklassifikation (UKÄ)

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Forskningsoutput

III-V Devices for Emerging Electronic Applications

Projekt

III-V komponenter för nya elektroniska applikationer

Citera det här