Oxidation and reduction behaviour of Ge/Si islands

Vilma Zela, T. Sass, Anders Gustafsson, I. Pietzonka, Werner Seifert

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

Sammanfattning

We have investigated the oxidation/reduction behaviour of dome-shaped three-dimensional islands of Ge on Si(001) grown by UHV-CVD at 620°C. The oxidation was done by exposing the surfaces to a steam of H<sub>2</sub>O in N<sub>2</sub>. The reduction was done in H<sub>2</sub>, which at T<800 °C selectively reduces GeO<sub>2</sub> only. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge-enrichments. In most cases, these enrichments show epitaxial relationship to the underlying Si substrate. These structures are therefore of potential interest for lateral epitaxial overgrowth of the SiO<sub>2</sub> by Ge, using the reduced Ge dots as the seeds for epitaxy
Originalspråkengelska
Titel på gästpublikation7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
FörlagLund University
Antal sidor2
StatusPublished - 2002
EvenemangProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sverige
Varaktighet: 2002 jun 242002 jun 28

Konferens

KonferensProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Land/TerritoriumSverige
OrtMalmö
Period2002/06/242002/06/28

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

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