Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

M. Ahola-Tuomi, M. P. J. Punkkinen, P. Laukkanen, M. Kuzmin, J. Lang, Karina Schulte, Annette Pietzsch, R. E. Perala, N. Rasanen, I. J. Vayrynen

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.
Originalspråkengelska
TidskriftPhysical Review B (Condensed Matter and Materials Physics)
Volym83
Nummer24
DOI
StatusPublished - 2011

Ämnesklassifikation (UKÄ)

  • Fysik
  • Naturvetenskap

Fingeravtryck

Utforska forskningsämnen för ”Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här