Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Rainer Timm; Fian Alexander; Martin Hjort; Claes Thelander; Erik Lind; Jesper N Andersen; Lars-Erik Wernersson; Anders Mikkelsen

doi:10.1063/1.3495776

Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Rainer Timm, Fian Alexander, Martin Hjort, Claes Thelander, Erik Lind, Jesper N Andersen, Lars-Erik Wernersson, Anders Mikkelsen

Forskningsoutput: Tidskriftsbidrag › Letter › Peer review

Originalspråk	engelska
Artikelnummer	132904
Tidskrift	Applied Physics Letters
Volym	97
DOI	https://doi.org/10.1063/1.3495776
Status	Published - 2010

Ämnesklassifikation (UKÄ)

Atom- och molekylfysik och optik

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10.1063/1.3495776

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@article{40e24a4ac2dd4109aa62836a9d4dd3c6,

title = "Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2",

author = "Rainer Timm and Fian Alexander and Martin Hjort and Claes Thelander and Erik Lind and Andersen, {Jesper N} and Lars-Erik Wernersson and Anders Mikkelsen",

year = "2010",

doi = "10.1063/1.3495776",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

AU - Timm, Rainer

AU - Alexander, Fian

AU - Hjort, Martin

AU - Thelander, Claes

AU - Lind, Erik

AU - Andersen, Jesper N

AU - Wernersson, Lars-Erik

AU - Mikkelsen, Anders

PY - 2010

Y1 - 2010

U2 - 10.1063/1.3495776

DO - 10.1063/1.3495776

M3 - Letter

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 132904

ER -