RF Characterization of Ferroelectric MOS Capacitors

The high-frequency capacitive and switching response of ferroelectric Hf0.5Zr0.5O2 (HZO) is investigated on scaled ferroelectric metal-oxide-semiconductor III-V capacitors. Spanning over six orders of magnitude, the measured frequency response allows for accurate modeling of the capacitance-frequency dispersion. The steady-state ferroelectric behavior is retained even in the mm-wave frequency range and provides a 25% capacitive tunability, demonstrating its applicability as a non-volatile reconfigurable varactor. The measured film reconfigurability is in the nanosecond time-regime, mainly limited by the measurement setup.