RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

Guntrade Roll, Mikael Egard, Sofia Johannson, Lars Ohlsson, Lars Erik Wernersson, Erik Lind

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

Sammanfattning

A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

Originalspråkengelska
Titel på värdpublikation2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor38-41
Antal sidor4
ISBN (tryckt)9781479903504
DOI
StatusPublished - 2013 jan. 1
Evenemang2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 - South Lake Tahoe, CA, USA
Varaktighet: 2013 okt. 132013 okt. 17

Konferens

Konferens2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
Land/TerritoriumUSA
OrtSouth Lake Tahoe, CA
Period2013/10/132013/10/17

Ämnesklassifikation (UKÄ)

  • Annan elektroteknik och elektronik

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