Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors

L. Hoglund, P. O. Holtz, Håkan Pettersson, C. Asplund, Q. Wang, S. Almqvist, H. Malm, E. Petrini, J. Y. Andersson

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceedingPeer review

Sammanfattning

Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels. (C) 2009 Elsevier B.V. All rights reserved.
Originalspråkengelska
Titel på värdpublikationInfrared Physics & Technology
FörlagElsevier
Sidor272-275
Volym52
DOI
StatusPublished - 2009
EvenemangInternational Conference on Quantum Structure Infrared Photodetector - Yosemite, CA
Varaktighet: 2009 jan. 182009 jan. 23

Publikationsserier

Namn
Nummer6
Volym52
ISSN (tryckt)1350-4495

Konferens

KonferensInternational Conference on Quantum Structure Infrared Photodetector
Period2009/01/182009/01/23

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

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