Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

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Sammanfattning

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.

Originalspråkengelska
Titel på värdpublikation69th Device Research Conference, DRC 2011 - Conference Digest
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (tryckt)9781612842417
DOI
StatusPublished - 2011 dec. 1
Evenemang69th Device Research Conference, DRC 2011 - Santa Barbara, CA, USA
Varaktighet: 2011 juni 202011 juni 22

Konferens

Konferens69th Device Research Conference, DRC 2011
Land/TerritoriumUSA
OrtSanta Barbara, CA
Period2011/06/202011/06/22

Ämnesklassifikation (UKÄ)

  • Annan elektroteknik och elektronik

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