Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs

Gautham Rangasamy, Mamidala Saketh Ram, Lars Ohlsson Fhager, Lars Erik Wernersson

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

We investigate self-heating in vertical, gate-all-around III-V InAs/InGaAs nanowire MOSFETs using pulsed IV measurements at various temperatures. Low temperature measurements reveal a negative output conductance indicating self-heating in the transistor. Under pulsed measurements, an increase in drain current (15%) and transconductance (30%) are observed at room temperature, with values influenced by the pulse width. This effect on performance is quantified with determination of the thermal resistance and capacitance. Furthermore, a first order thermal circuit is modelled based on the thermal impedances. The results indicate that the intrinsic temperature rises to 385 K when the device is operated in DC at room temperature (300 K) with a thermal time constant of 1~μ s. We find that self-heating is a limiting factor for device performance.

Originalspråkengelska
Sidor (från-till)1212-1215
Antal sidor4
TidskriftIEEE Electron Device Letters
Volym44
Nummer7
DOI
StatusPublished - 2023 juli 1

Ämnesklassifikation (UKÄ)

  • Energiteknik

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