Sammanfattning
We investigate self-heating in vertical, gate-all-around III-V InAs/InGaAs nanowire MOSFETs using pulsed IV measurements at various temperatures. Low temperature measurements reveal a negative output conductance indicating self-heating in the transistor. Under pulsed measurements, an increase in drain current (15%) and transconductance (30%) are observed at room temperature, with values influenced by the pulse width. This effect on performance is quantified with determination of the thermal resistance and capacitance. Furthermore, a first order thermal circuit is modelled based on the thermal impedances. The results indicate that the intrinsic temperature rises to 385 K when the device is operated in DC at room temperature (300 K) with a thermal time constant of 1~μ s. We find that self-heating is a limiting factor for device performance.
Originalspråk | engelska |
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Sidor (från-till) | 1212-1215 |
Antal sidor | 4 |
Tidskrift | IEEE Electron Device Letters |
Volym | 44 |
Nummer | 7 |
DOI | |
Status | Published - 2023 juli 1 |
Ämnesklassifikation (UKÄ)
- Energiteknik