Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Magnus Larsson, Jakob Wagner, Mathias Wallin, Paul Håkansson, Linus Fröberg, Lars Samuelson, Reine Wallenberg

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

166 Citeringar (SciVal)

Sammanfattning

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Originalspråkengelska
Artikelnummer015504
TidskriftNanotechnology
Volym18
Utgåva1
DOI
StatusPublished - 2007

Bibliografisk information

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid Mechanics (011094009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Ämnesklassifikation (UKÄ)

  • Nanoteknik

Fingeravtryck

Utforska forskningsämnen för ”Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här