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We present electronic band structure properties of strained InxGa(1x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eightband k · p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The electronic band structure parameters are studied for the well composition of 0.2 ≤ x ≤ 1 and thickness from 5 to 13 nm. The bandgap and effective mass of the strained wells are increased for x >0.53 due to compression strain and decreased for x < 0.53 due to tensile strain as compared to that of unstrained wells. The calculated band structure parameters are utilized in modeling long channel In0.71Ga0.29As/InP quantum well MOSFETs, and the model is validated against measured IV and low frequency CV characteristics at room temperature and cryogenic temperature. Exponential band tails and first and secondorder variation of the charge centroid capacitance and interface trap density are included in the electrostatic model. The Urbach parameter obtained in the model is E0 = 9 meV, which gives subthreshold swing (SS) of 18 mV/dec at T = 13 K and agrees with the measured SS of 19 mV/dec. Interface trap density is approximately three orders higher at T = 300 K compared to T = 13 K due to multiphonon activated traps. This model emphasizes the importance of considering disorders in the system in developing device simulators for cryogenic applications.
Originalspråk  engelska 

Artikelnummer  092105 
Tidskrift  Applied Physics Letters 
Volym  120 
Nummer  9 
DOI  
Status  Published  2022 feb. 28 
Ämnesklassifikation (UKÄ)
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Utforska forskningsämnen för ”Strained In_{x }Ga_{(1}_{x }_{)}As/InP near surface quantum wells and MOSFETs”. Tillsammans bildar de ett unikt fingeravtryck.Projekt
 1 Avslutade

IIIV komponenter för nya elektroniska applikationer
Olausson, P., Lind, E. & Borg, M.
2019/07/01 → 2024/02/23
Projekt: Avhandling