Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

Iwona Kowalik; E. Guziewicz; K. Kopalko; S. Yatsunenko; A. Wojcik-Glodowska; M. Godlewski; P. Dluzewski; E. Lusakowska; W. Paszkowicz

doi:10.1016/j.jcrysgro.2008.11.086

Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

Iwona Kowalik, E. Guziewicz, K. Kopalko, S. Yatsunenko, A. Wojcik-Glodowska, M. Godlewski, P. Dluzewski, E. Lusakowska, W. Paszkowicz

MAX IV-laboratoriet

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

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We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Originalspråk	engelska
Sidor (från-till)	1096-1101
Tidskrift	Journal of Crystal Growth
Volym	311
Nummer	4
DOI	https://doi.org/10.1016/j.jcrysgro.2008.11.086
Status	Published - 2009

Ämnesklassifikation (UKÄ)

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Naturvetenskap

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10.1016/j.jcrysgro.2008.11.086

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Kowalik, I., Guziewicz, E., Kopalko, K., Yatsunenko, S., Wojcik-Glodowska, A., Godlewski, M., Dluzewski, P., Lusakowska, E., & Paszkowicz, W. (2009). Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors. Journal of Crystal Growth, 311(4), 1096-1101. https://doi.org/10.1016/j.jcrysgro.2008.11.086

@article{dc13172fca934a4c8a46994e99143ef5,

title = "Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors",

abstract = "We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.",

keywords = "Heterojunction semiconductor devices, II-VI materials, Semiconducting, Zinc compounds, Characterization, Atomic layer epitaxy, Solar cells",

author = "Iwona Kowalik and E. Guziewicz and K. Kopalko and S. Yatsunenko and A. Wojcik-Glodowska and M. Godlewski and P. Dluzewski and E. Lusakowska and W. Paszkowicz",

year = "2009",

doi = "10.1016/j.jcrysgro.2008.11.086",

language = "English",

volume = "311",

pages = "1096--1101",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "4",

}

Kowalik, I, Guziewicz, E, Kopalko, K, Yatsunenko, S, Wojcik-Glodowska, A, Godlewski, M, Dluzewski, P, Lusakowska, E & Paszkowicz, W 2009, 'Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors', Journal of Crystal Growth, vol. 311, nr. 4, s. 1096-1101. https://doi.org/10.1016/j.jcrysgro.2008.11.086

TY - JOUR

T1 - Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

AU - Kowalik, Iwona

AU - Guziewicz, E.

AU - Kopalko, K.

AU - Yatsunenko, S.

AU - Wojcik-Glodowska, A.

AU - Godlewski, M.

AU - Dluzewski, P.

AU - Lusakowska, E.

AU - Paszkowicz, W.

PY - 2009

Y1 - 2009

N2 - We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

AB - We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

KW - Heterojunction semiconductor devices

KW - II-VI materials

KW - Semiconducting

KW - Zinc compounds

KW - Characterization

KW - Atomic layer epitaxy

KW - Solar cells

U2 - 10.1016/j.jcrysgro.2008.11.086

DO - 10.1016/j.jcrysgro.2008.11.086

M3 - Article

SN - 0022-0248

VL - 311

SP - 1096

EP - 1101

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

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