Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic

E. I. Gorokhova, S. B. Eron’Ko, E. A. Oreshchenko, A. V. Sandulenko, P. A. Rodnyi, K. A. Chernenko, I. D. Venevtsev, A. M. Kul’Kov, Faina Muktepavela, Plamen Boutachkov

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskriftPeer review

Sammanfattning

This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration to 3.44 × 1019 cm−3. As the gallium concentration increases in the range 0.05–0.1 mass % in a ceramic of composition ZnO:Ga, the defect luminescence band is suppressed and a characteristic exciton luminescence is formed with a maximum corresponding to 389 nm and a damping time constant of 1.1 ns.

Originalspråkengelska
Sidor (från-till)729-737
Antal sidor9
TidskriftJournal of Optical Technology (A Translation of Opticheskii Zhurnal)
Volym85
Nummer11
DOI
StatusPublished - 2018

Ämnesklassifikation (UKÄ)

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