Sammanfattning
It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138]
Originalspråk | engelska |
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Artikelnummer | 182101 |
Tidskrift | Applied Physics Letters |
Volym | 98 |
Nummer | 18 |
DOI | |
Status | Published - 2011 |
Ämnesklassifikation (UKÄ)
- Den kondenserade materiens fysik