The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Xianshao Zou; Jianqi Dong; Kang Zhang; Weihua Lin; Meiyuan Guo; Wei Zhang; Xingfu Wang

doi:10.1016/j.nanoen.2021.106145

The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Xianshao Zou, Jianqi Dong, Kang Zhang, Weihua Lin, Meiyuan Guo, Wei Zhang, Xingfu Wang

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

Sammanfattning

Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

Originalspråk	engelska
Artikelnummer	106145
Tidskrift	Nano Energy
Volym	87
DOI	https://doi.org/10.1016/j.nanoen.2021.106145
Status	Published - 2021 sep. 1

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title = "The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire",

abstract = "Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.",

keywords = "Carrier dynamics, Charge trapping, InGaN/GaN MQWs, Microwires, Piezotronic effect, Time-resolved spectroscopy",

author = "Xianshao Zou and Jianqi Dong and Kang Zhang and Weihua Lin and Meiyuan Guo and Wei Zhang and Xingfu Wang",

year = "2021",

month = sep,

day = "1",

doi = "10.1016/j.nanoen.2021.106145",

language = "English",

volume = "87",

journal = "Nano Energy",

issn = "2211-2855",

publisher = "Elsevier",

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TY - JOUR

T1 - The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

AU - Zou, Xianshao

AU - Dong, Jianqi

AU - Zhang, Kang

AU - Lin, Weihua

AU - Guo, Meiyuan

AU - Zhang, Wei

AU - Wang, Xingfu

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

AB - Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

KW - Carrier dynamics

KW - Charge trapping

KW - InGaN/GaN MQWs

KW - Microwires

KW - Piezotronic effect

KW - Time-resolved spectroscopy

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U2 - 10.1016/j.nanoen.2021.106145

DO - 10.1016/j.nanoen.2021.106145

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SN - 2211-2855

VL - 87

JO - Nano Energy

JF - Nano Energy

M1 - 106145

ER -

The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

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