The VO2* defect in silicon

Lennart Lindström; LI Murin; BG Svensson; VP Markevich; T Hallberg

doi:10.1016/j.physb.2003.09.146

The VO2* defect in silicon

Lennart Lindström, LI Murin, BG Svensson, VP Markevich, T Hallberg

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Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift › Peer review

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The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.

Originalspråk	engelska
Sidor (från-till)	509-513
Tidskrift	Physica B: Condensed Matter
Volym	340
DOI	https://doi.org/10.1016/j.physb.2003.09.146
Status	Published - 2003

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title = "The VO2* defect in silicon",

abstract = "The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.",

keywords = "vacancy-dioxygen, silicon, defects, LVMs",

author = "Lennart Lindstr{\"o}m and LI Murin and BG Svensson and VP Markevich and T Hallberg",

year = "2003",

doi = "10.1016/j.physb.2003.09.146",

language = "English",

volume = "340",

pages = "509--513",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - The VO2* defect in silicon

AU - Lindström, Lennart

AU - Murin, LI

AU - Svensson, BG

AU - Markevich, VP

AU - Hallberg, T

PY - 2003

Y1 - 2003

N2 - The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.

AB - The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.

KW - vacancy-dioxygen

KW - silicon

KW - defects

KW - LVMs

U2 - 10.1016/j.physb.2003.09.146

DO - 10.1016/j.physb.2003.09.146

M3 - Article

SN - 0921-4526

VL - 340

SP - 509

EP - 513

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

The VO2* defect in silicon

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