Sammanfattning

3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using Si3N4 template assisted selective area metal-organic vapor-phase epitaxy (MOVPE). Despite growth nucleation on polycrystalline W, we can obtain a high yield of single-crystalline InAs nanowires, as observed by transmission electron microscopy (TEM) and electron backscatter diffraction (EBSD). The nanowires exhibit a mobility of 690 cm2/(V s), a low-resistive, Ohmic electrical contact to the W film, and a resistivity which increases with diameter attributed to increased grain boundary scattering. These results demonstrate the feasibility for single-crystalline III-V back-end-of-line integration with a low thermal budget compatible with Si CMOS.

Originalspråkengelska
Sidor (från-till)4756-4761
Antal sidor6
TidskriftNano Letters
Volym23
Nummer11
DOI
StatusPublished - 2023 juni 14

Bibliografisk information

Publisher Copyright:
© 2023 American Chemical Society.

Ämnesklassifikation (UKÄ)

  • Den kondenserade materiens fysik

Fingeravtryck

Utforska forskningsämnen för ”Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här