Vertical III-V Nanowire MOSFETs

Material Science

• Nanowire 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Heterojunction 60%
• Velocity 20%
• Solid 20%
• Devices 20%
• Liquid 20%
• Electron Transfer 20%
• Transistor 20%
• Vapor 20%
• Indium Gallium Arsenide 20%
• Band-Gap Material 20%

Engineering

• Fabrication 60%
• Heterojunctions 40%
• Energy Gap 40%
• Performance 20%
• High Frequency 20%
• Tunnel Construction 20%
• Heterostructures 20%
• Transistor 20%
• Gate Length 20%
• Impact Ionization 20%
• Plate Structure 20%