@article{71f2b9e775be4d61ac8752e06e7a18d4,
title = "Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V",
keywords = "Nanowire, Transistor, FET, MOSFET, InAs",
author = "Karl-Magnus Persson and Martin Berg and Mattias Borg and Jun Wu and Henrik Sj{\"o}land and Erik Lind and Lars-Erik Wernersson",
year = "2012",
doi = "10.1109/DRC.2012.6256966",
language = "English",
pages = "195--196",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",
note = "Device Research Conference (DRC), 2012 70th Annual ; Conference date: 18-06-2012",
}